J. Phys. IV France 7 (1997) C2-575-C2-576
Photoelectron Diffraction Investigation of Strained InGaAs Grown on (001) GaAsM.G. Proietti1, S. Turchini2, J. Garcia1, M.C. Asensio3, C. Casado3, F. Martelli4 and T. Prosperi2
1 ICMA, CSIC-Universidad de Zaragoza, Facultad de Ciencias, Pza. S. Francisco s.n., 50009 Zaragoza, Spain
2 ICMAT- CNR, Area della Ricerca di Roma, CP. 10, 00016 Monterotondo Stazione, Italy
3 LURE, Université de Paris Sud, 91405 Orsay cedex, France
4 Fondazione "Ugo Bordoni", Via B. Castiglione 59, 00142 Roma, Italy
We have performed Soft X-Ray Photoelectron Diffraction measurents, at the Ga3d, As3d and In4d core levels, to study the effects of strain on InGaAs grown on (001) GaAs. Polar and azimuths] scans have been recorded and compared with Single Scattering Cluster Calculations. A good agreement is obtained between theory and experiment indicating that the lattice expands in the growth direction as predicted by the elastic theory.
© EDP Sciences 1997