J. Phys. IV France 7 (1997) C2-1135-C2-1136
XAFS Studies of TiSi2 and CoSi2 Thin Films at the Ti, Co and Si K-EdgeI. Coulthard1, T.K. Sham1, M. Simard-Normandin2, M. Saran2 and J.D. Garrett3
1 Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
2 Northern Telecom, P.O. Box 3511, Station C, Ottawa, K1Y 4H7, Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, Canada
XAFS measurements at the metal and Si K-edge have been made for a series of TiSi2 and CoSi2 blanket salicide films as well as bulk CoSi2, and TiSi2. It was found that the films have essentially the same structure as the bulk TiSi2 and CoSi2 and that the Si XANES exhibit very rich structures. Both the materials characterization and spectroscopy aspects of the XAFS are discussed.
© EDP Sciences 1997