J. Phys. IV France 7 (1997) C2-495-C2-496
Angular Dependent XAFS Studies of a MoSi2 Single CrystalS.J. Naftel1, T.K. Sham1, V.L. Smelyansky2, J.S. Tse2 and J.D. Garrett3
1 Department of Chemistry, University of Western Ontario, London N6A 5B7, Canada
2 Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottmva Kl A 0R6 Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton L8S 4M 1, Canada
We report angular dependent X-ray absorption measurements at the Mo L3,2 edge and the Si K-edge for a MoSi. single crystal. The crystal was oriented so that an azimuthal rotation of the crystal about the surface normal (direction of the incident photons) would align the c-axis of the crystal anywhere between parallel and perpendicular to the polarization of the photons. It was found that while the Mo L3,2 edge XANES shows little angular dependence, the Si K-edge XANES shows a very strong polarization dependence of which the intensity exhibits a two-fold symmetry. This angular dependence of the Si K-edge XANES is attributed to the high densities of unoccupied states localized perpendicular to the Si-Si bond.
© EDP Sciences 1997