J. Phys. IV France 7 (1997) C2-711-C2-712
Local Structure of Ion-Bombarded α-SiC Analyzed by EXAFSM. Borowski1, W. Bolse2 and J. Conrad2
1 LURE, bâtiment 209a, 91405 Orsay cedex, France
2 II. Physikalisches Institut und SFB 345, Universität Göttingen, 37073 Göttingen, Germany
X-ray absorption spectroscopy on the Si k-edge was performed on α-SiC (6H) to monitor the evolution of the local structure around the Si atoms after ion bombardment. The samples were irradiated by 50 keV Na ions at fluences of 1013 - 1016 ions/cm2 at a temperature of 80 K. EXAFS analysis clearly reveals that the hetero-atomic short range order of the crystalline matrix is almost completely conserved over the crystalline-to-amorphous transition as indicated by RBS-C. Further irradiation at higher fluences results in a change of the atomic coordination and formation of homonuclear Si-Si bonds.
© EDP Sciences 1997