J. Phys. IV France 7 (1997) C2-493-C2-494
Si Core Level XANES of Organometallic Compounds Containing Si-Ge Bonds: Experimental and Theoretical ObservationsJ.Z. Xiong and T.K. Sham
Department of Chemistry, University of Western Ontario, London N6A 5B7, Ontario, Canada
Si K- and L2,3-edge XANES for Si(GeMe3)4 and Ge(SiMe3)4 are studied with the aid of MS-Xα calculation. Good agreement is found between the experiment and the theory. The lowest energy features are assigned to the transitions to mostly unoccupied orbitals with significant Si-Ge contribution.
© EDP Sciences 1997