J. Phys. IV France 7 (1997) C2-687-C2-689
Bond Lengths and Elasticity in Strained-Layer SemiconductorsJ.C. Woicik1, J.G. Pellegrino1 and K.E. Miyano2
1 National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
2 Department of Physics, Brooklyn College, Brooklyn, New York 11210, U.S.A.
The x-ray standing wave (XSW) and extended x-ray absorption fine structure (EXAFS) techniques have determined the strain and bond distortions in an InAs monolayer embedded in GaAs(001). A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented.
© EDP Sciences 1997