J. Phys. IV France 07 (1997) C1-707-C1-708
In Situ Growth of Polycrystalline Bismuth-iron-Garnet Films on Quartz Glass SubstrateT. Okuda, A. Kudoh, S. Yoshihara, N. Adachi and H. Ohsato
Section of Inorganic Materials, Department of Materials Science and Engineering, Nagoya Institute of Technologv, Gokiso-cho, Showa-ku, Nagoya, 466, Japan
Polycrystalline (Bi,Gd)3(Fe,Ga)5O12 garnet layer was prepared on a quartz glass substrate at 500°C by alternating reactive ion beam sputtering using two ceramic targets, Gd3Ga5O12 and 3Bi2O3-5Fe2O3. The lattice constant was 12.548Å. The layer was almost magnetically compensated and paramagnetic. On that layer, polycrystalline Bi3Fe5O12 garnet layer was epitaxially grown by reactive ion beam sputtering. Those two layers were successively deposited in the same apparatus.
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