J. Phys. IV France 07 (1997) C1-631-C1-632
Magnetoresistance Effect in the La1-xSrxMnO3 CeramicsN. Ichinose and A. Nakamura
Waseda University, School of Science and Engineering, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo, 169, Japan
In this paper, we present the experimental investigation on the MR effect with particular emphasis on the ceramic processing of the La1-xSrxMnO3 system. The MR ratio is defined here as Δρ/ρ(H)=(ρ(H)-ρ(0))/ρ(H) where ρ(0) is the zero field resisitance and ρ(H) the resisitivity in the applied magnetic field, e.g., H = 1000kA/m. The MR ratio is dependent on the chemical composition and firing conditions. At room temperature, the higher Δρ/ρ(H) value of ~12% has been obtained for the La0.8Sr0.2MnO3 ceramics fired at 1673K. This value is comparable to higher values for the so-called "giantmagnetoresistance( GMR)"-type materials of metallic multilayer. The order of magnitude change in electrical resistivity could be useful for various magnetic and electric device applications.
© EDP Sciences 1997