J. Phys. IV France 07 (1997) C1-611-C1-612
Quality of Fe3O4 Films Prepared by Plasma Assisted MOCVDT. Kiyomura and M. Gomi
Department of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-12, Japan
Fe3O4 films have been grown on Si substrates by plasma-assisted MOCVD using acetylacetonate iron complex as a gas source. Relationship between the deposition rate of the film and substrate temperature indicated a possibility that part of the source molecules may be decomposed into iron-oxide molecule and an intermediate by plasma applied in a diffusion process to the substrate surface. These reaction species allowed growth of Fe3O4 films with low carbon contamination and good surface morphology at low temperature of 400°C.
© EDP Sciences 1997