Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-113-C5-118
Peculiarities of Field Electron Emission from CVD Diamond FilmsA.V. Karabutov1, V.I. Konov1, S.M. Pimenov1, V.D. Frolov1, E.D. Obraztsova1, V.I. Polyakov2 and N.M. Rossukanyi2
1 General Physics Institute, Vavilova str. 38, Moscow 117942, Russia
2 Institute of Radio Engineering and Electronics, Mohovaya str. 11, Moscow 103907, Russia
Results are reported on characterization of the field electron emission from diamond films grown by dc arc discharge plasma CVD onto Si substrates from CH4-H2 gas mixtures. The field electron emission was observed at 15-20 V/µm. Emission current-voltage dependences were studied for films prepared at different CVD conditions and post-growth surface treatment/ modification (ultrathin metal and metal oxide coatings, MW-plasma processing, laser-induced surface graphitization). Features of emission current versus applied field behaviour (including a hysteresis phenomenon, vacuum arc initiation) and ultralow (0.1-0.5 eV) values of effective work function derived from Fowler-Nordheim plot fitting are discussed. A high vacuum scanning tunneling-field emission microscope was applied for simultaneous mapping of field electron emission inten-sity, topography and work function to study electronic and structural properties of field emission centers.
© EDP Sciences 1996