Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-309-C3-314
Magnetic Transitions and Magneto-Transport in Epitaxial Pr0.5Sr0.5MnO3 Thin FilmsP. Wagner1, V. Metlushko1, M. Van Bael1, R.J.M. Vullers1, L. Trappeniers1, A. Vantomme2, J. Vanacken1, 3, G. Kido3, V.V. Moshchalkov1 and Y. Bruynseraede1
1 Laboratorium voor Vaste-Stoffysica en Magnetisme, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
2 Instituut voor Kern- en Stralinsfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
3 Tsukuba Magnet Laboratories, National Research Institute for Metals, Sengen 1-2-1, Tsukuba Science City, Ibaraki 305, Japan
Epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5 MnO3 were prepared by dc-magnetron sputtering, structurally characterized by x-ray diffraction and their physical properties investigated by magnetization and electrical transport measurements. Ferromagnetic ordering appears in zero-field at 263 K, followed by a second transition into an antiferromagnetic state at 160 K. The zero-field resistivity has a semiconducting behaviour according to Mott's law and becomes quasi-metallic only within the ferromagnetic state, whose temperature range can be extended by applying an external magnetic field. The negative magnetoresistance effect increases systematically with decreasing temperature and reaches a value of 700 % at 1.5 K in a field of 12 T. For temperatures below 75 K we observed additionally a memory effect, showing up as a persistent, field induced lowering of sample resistivity.
© EDP Sciences 1996