Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-207-C3-211
Reset Noise at Low TemperaturesN.E. Bock
Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrentyeva 13, 630090 Novosibirsk, Russia
This paper presents results of the measurement and modelling of reset noise in charge-detection circuits of detector array multiplexers at low temperatures. To explain the temperature dependence of reset noise, it is proposed to take into account the source of noise associated with emission of electrons from interface states under the gate of reset transistor. It was found that at very low temperatures (T<30K ) the emission-related component contributes most of reset noise. When applying reset pulse to the source (drain) of the reset transistor, the so-called "fill-and-spill" method of setting charge is obtained. The fill-and-spill method results in decrease of reset noise to kTC noise level but down to 40 K. The interface state energy distribution was obtained from the noise data.
© EDP Sciences 1996