Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-199-C3-206
CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit DesignW.-L. Lu1, Z.-W. Hwang1 and L.S. Lu2
1 Dept. of Physics and Chemistry, Chinese Naval Academy, Tso-Ying, Kaohsiung, Taiwan, R.O.C.
2 Dept. of Applied Physics, Chung Cheng Institute of Technology, Tshsi, Taoyuan, Taiwan, R.O.C.
This work presents the low temperature characteristics of commercial complementary-mental-oxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Measurements are performed with the temperature calibration of the device under test. Two most important temperature dependent parameters of the drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier freeze out effect is considered in the threshold voltage calculation. Two kinds of empirical carrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extraction scheme is proposed to extract new mobility model parameters.
© EDP Sciences 1996