Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-193-C3-197
Process Modification for Improved Low Temperature CMOS PerformanceC. Hwang1, C. Jenq2, B. Hammond2, J. Gillick1 and J. Woo1
1 Department of Electrical Engineering, University of California, Los Angeles, 405 Hilgard Avenue, Los Angeles, CA 90095-1594, U.S.A.
2 Superconductor Technologies Incorporated, 460 Ward Street, Suite F, Santa Barbara, CA 93111-2310, U.S.A.
Only minimal performance improvement is achievable when a standard, room-temperature CMOS component is cooled down to low temperatures. However, by modifying the process flow, a 2-3x increase in performance is possible. TCAD tools can be used to study and optimize an original, room temperature CMOS process for low temperature operation. By adjusting the low temperature threshold voltage to a room temperature value, CMOS ring oscillator delays drop in half. Even greater improvement is possible if a lower threshold voltage is used.
© EDP Sciences 1996