Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-157-C3-161
Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire BaseV. Ryzhii, I. Khmyrova, M. Ryzhii and M. Ershov
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu City, 965-80, Japan
Infrared phototransistors based respectively on a quantum-well and a quantum-wire structures, utilizing intersubband electron transitions, are considered using developed analytical model. The dark currents and responsivities of the phototransistors in question are compared. It is shown that the quantum-wire infrared phototransistor can surpass the infrared phototransistor with a quantum well in performance especially at low temperatures. This is due to the one-dimensional nature of the electrons in the quantum-wires providing higher energy of thermal excitation, leading to low dark current and sensitivity to normal incident radiation.
© EDP Sciences 1996