Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-99-C3-103
Anomalous Behaviour of the Electric Field in Highly-Compensated Non-Uniform Semiconductors at Low TemperaturesJ.A. Jiménez-Tejada, A. Palma, A. Godoy and J.E. Carceller
Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
The electric field and net charge density are simulated in a semiconductor structure with deep centers and a non-uniform dopant profile. Different regions of the electric field and net charge density are found in the device. The analysis of the distribution of these variables allows measurements devoted to the characterization of deep impurities at low temperatures to be interpreted.
© EDP Sciences 1996