Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-67-C3-72
Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low TemperaturesM.A. Pavanello1, J.A. Martino1 and J.-P. Colinge2
1 Laboratório de Sistemas Integráveis, Universidade de São Paulo, Brazil
2 Laboratoire de Microélectronique, Université Catholique de Louvain, Belgium
In this work is presented a theoretical and experimental analysis of the substrate potential drop and your influence on the fully depleted SOI MOSFET threshold voltage. This study is done at room temperature and at liquid nitrogen temperature. Good agreement was found between the simple model and experimental results.
© EDP Sciences 1996