Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-43-C3-47
Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature OperationB. Cheng and J. Woo
Department of Electrical Engineering, University of California, Los Angeles, CA 90095-1594, U.S.A
A new semi-empirical model for the electron and hole mobilities of the MOSFET inversion layers is proposed. This model takes into account the dependence of Coulombic, phonon, and surface roughness scattering on temperature and transverse field over a wide range of values (77 K ≤ T ≤ 343 K and transverse fields up to 1.36 MV/cm). For the first time, the magnitude of the key parameter η in defining the effective transverse field is found to be a continuous function of temperature for both electrons and holes. The Eeff dependences of the universal curves are observed to differ between the electrons and holes, particularly at low temperatures. The proposed model, verified by comparison of experimental data and simulated MOSFET I-V characteristics at different temperatures, can be easily incorporated into 2-D device simulators for device and circuit simulation.
© EDP Sciences 1996