Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-13-C3-18
Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETsJ.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller
Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain
Modelling of the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance of very short channel MOSFETs. This model can be easily included in circuit simulators of systems with a huge number of components. Experimental verification of the accuracy of this model is provided. The improvement of MOSFET transconductance due to electron-velocity overshoot is found to be greater at low temperature than at room temperature.
© EDP Sciences 1996