Les intermétalliques : des superalliages aux quasicristaux
J. Phys. IV France 06 (1996) C2-29-C2-46
Interfaces in SilicidesF.M. d'Heurle
IBM Research, PO. 218, Yorktown Heights, NY 10598, U.S.A. and Kungliga Tekniska Högskolan, Electrum 229, 164 40 Kista, Sweden
The role of interfaces with respect to the use of silicides in electronic technology is analyzed from two different points of view. To begin with interfaces of different nature, grain boundaries, stacking faults, etc... are examined in the perspective of their metallurgical properties as they affect silicide formation by solid state reaction, diffusion of silicon dopants, nucleation of the new phases.... While considering those metallurgical aspects, reference is made also to the integration of silicides in silicon device technology, and to the relations between metallurgical parameters and electrical properties, e.g. the density of stacking faults and the resistivity of WSi2. In a shorter second section the previous order is reversed : attention is focused on the electrical properties of silicide silicon interfaces in ohmic and rectifying contacts, and on the use of epitaxial silicides in metal base transistors, where one desires such perfect match between silicide layer and silicon as to allow the transfer of ballistic electrons across the layer.
© EDP Sciences 1996