Detailed Study of Stacking Faults in Martensite
Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, 8400 S.C. de Bariloche, Argentina
Relaxations around non-basal plane stacking defects in Cu-Zn-Al martensite have been analyzed by transmission electron microscopy, in order to determine the fault planes and corresponding displacement vectors. Following the results obtained for the 2 H phase, a model was proposed for the kind of non-basal faults present in the 18R monocrystalline martensite. Four kinds were found, each with a different relaxation.
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