J. Phys. IV France 05 (1995) C5-655-C5-661
Principles for Controlling the Electronic Quality of High-Rate Deposited a-Si:H FilmsG. Suchaneck1, T. Blum2, S. Röhlecke2 and A. Kottwitz2
1 Technische Universität Dresden, Institut für Halbleiter- und Mikrosystemtechnik, Mommsenstr. 13, 01062 Dresden, Germany
2 Dresden University of Technology, Institute of Semiconductor Technology and Microsystems, Mommsenstr. 13, 01062 Dresden, Germany
By altering the plasma generation frequency, applying a magnetic field, changing the plasma regime from the low voltage γ-regime where the dominant electron-energy gain mechanism is related to the sheath expansion, to the high voltage γ-regime where the discharge is maintained by secondary electrons emitted by the electrodes under ion bombardment, or generating a highly excited low-pressure plasma in a helicon-type source the influence of the particle and energy flux to the substrate on the a-Si:H film electronic properties was investigated. Deposition rate simulation was performed regarding a radical source located at the sheath/plasma boundary. Radical losses due to diffusion and reactive collisions with gas molecules were taken into account.
© EDP Sciences 1995