J. Phys. IV France 05 (1995) C5-621-C5-628
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of SiO2 Films : Oxygen Plasma DiagnosticC. Regnier, J. Desmaison, P. Tristant and D. Merle
Laboratoire des Matériaux Céramiques et Traitements de Surface, URA 320 du CNRS, Université de Limoges, 123 av. Albert Thomas, 87060 Limoges cedex, France
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the electronic temperature decreases from 22000 to 11000 K and the gas temperature increases from 400 to 500 K. Moreover the microwave power (180 - 480 W) has an influence on the deposition rate and on the quality of SiO2 coatings (density and etch rate in an HF solution). This effect can be correlated with the increase in the electron density (0.7.1010 to 3.7.1010 cm-3) and of the gas temperature (400 to 460 K).
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