J. Phys. IV France 05 (1995) C5-557-C5-560
A New Route to the Deposition of Al2O3 by MOCVDA.C. Jones1, D.J. Houlton1, S.A. Rushworth1 and G.W. Critchlow2
1 Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, L62 3QF, U.K.
2 Institute of Surface Science and Technology, University of Loughborough, Loughborough, Leciestershire, LE11 3TU, U.K.
Thin films of aluminium oxide, Al2O3, have been deposited by atmospheric pressure MOCVD using trimethylaluminium (Me3Al) and iso-propanol (Pr'OH) as precursors. The films were deposited over the temperature range 400-600°C and had growth rates of up to 67 Å min-1. Analysis by Auger electron spectroscopy showed that films deposited at 400°C were high purity with carbon contamination < 0.5 at %.
© EDP Sciences 1995