J. Phys. IV France 05 (1995) C5-525-C5-531
Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as PrecursorA. Bastianini1, G.A. Battiston1, R. Gerbasi1, M. Porchia1 and S. Daolio2
1 CNR, Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati, Corso Stati Uniti 4, 35127 Padova, Italy
2 CNR, Istituto di Polarografia ed Elettrochimica Preparativa, Corso Stati Uniti 4, 35127 Padova, Italy
By using tetrakis(diethylamido) zirconium |Zr(NEt2)4|. excellent quality ZrO2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580°C and in the presence of oxygen. The as-grown films are colourless. smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis, the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550°C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000°C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.
© EDP Sciences 1995