J. Phys. IV France 05 (1995) C5-473-C5-480
Vanadium Oxi-Carbide Coatings Deposited by OMCVD in an Isothermal ReactorL. Poirier1 and F. Teyssandier2
1 GIAT-Industries, CRET, 7 Route de Guerry, 18023 Bourges cedex, France
2 Institut de Science et de Génie des Matériaux et Procédés, UPR 8521 du CNRS, Université, Av. de Villeneuve, 66860 Perpignan cedex, France
This paper reports on the influence of both the vaporization mechanism and gaseous transport phenomena, on the properties of vanadium oxi-carbide coatings. In order to study the influence of the residence time of the gaseous mixture on the properties of the deposited layer, a specific device has been built. In this device the temperature of the reactor wall is very accurately controlled to the vaporization temperature of the precursor by a heat pipe disposed inside a furnace, whereas the temperature of the substrate is imposed independently. A vacuum-tight sliding device allowed varying the length between the vaporization crucible and the deposition substrate. A complete factorial design with three factors and two levels, was carried out for two characteristic vaporization temperatures of the precursor. We studied the influence of three parameters on the thickness and composition of the deposits : the substrate temperature, the hydrogen flow rate, and the distance between the vaporization crucible and the steel substrate.
© EDP Sciences 1995