J. Phys. IV France 05 (1995) C5-449-C5-463
Recent Trends in the Selection of Metal-Organic Precursors for MOCVD ProcessF. Maury
Cristallochimie, Réactivité et Protection des Matériaux, CNRS/INPT, Ecole Nationale Supérieure de Chimie, 118 Route de Narbonne, 31077 Toulouse cedex, France
The tremendous expansion of metal-organic chemical vapor deposition process (MOCVD) is accounted for its ability to deposit at low temperature a wide variety of thin film materials keeping advantages of the conventional CVD process. The design and the selection of suitably tailored metal-organic precursors is a fundamental key to develop successfully an MOCVD process. The criteria of selection of metal-organic precursors are critically reviewed and the problem of the carbon incorporation in the films is discussed. Advantages and disadvantages of employing single source metal-organic precursors instead of separate precursors for MOCVD of multi-components materials is discussed using results on the deposition of chromium nitride and [MATH]-CoGa.
© EDP Sciences 1995