J. Phys. IV France 05 (1995) C5-315-C5-322
SIPOS Deposition from Disilane : Experimental Study and ModellingC. Cordier1, E. Dehan2, E. Scheid2, P. Duverneuil1 and J.P. Couderc1
1 Laboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC, 18 Chemin de la Loge, 31078 Toulouse cedex, France
2 UPR 8001 du CNRS, LAAS, 7 Avenue du Colonel Roche, 31077 Toulouse cedex, France
SIPOS films were deposited from a mixture of disilane and nitrous oxide in a tubular hot wall reactor and their thickness and oxygen content were measured. To increase one's knowledge in SIPOS deposition, a detailed chemical mechanism is proposed to represent homogeneous and heterogeneous reactions and the CVD2 model taking into account hydrodynamics and mass transfert with chemical reactions is adjusted to SIPOS deposition. A good agreement between experimental results and model predictions for various operating conditions puts in evidence the representativity of the chosen chemical mechanism. By the use of CVD2 model, the main chemical pathways are identified.
© EDP Sciences 1995