J. Phys. IV France 05 (1995) C5-277-C5-282
Reactivities of TaCl5 and H2O as Precursors for Atomic Layer DepositionH. Siimon and J. Aarik
University of Tartu, Institute of Experimental Physics and Technology, Ülikooli 18, EE2400 Tartu, Estonia
Model calculations and time dependence of the deposit mass recorded by quartz crystal microbalance during atomic layer growth of tantalum oxide are used to determine sticking coefficients of TaCl5 and H2O, and diffusion coefficient of TaCl5 in N2. It is shown that the reactivity of TaCl5 towards H2O-treated tantalum oxide surface is remarkably higher than the reactivity of H2O towards TaCl5-treated tantalum oxide.
© EDP Sciences 1995