J. Phys. IV France 05 (1995) C5-113-C5-118
On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2J.B. Rem1, J.H. Klootwijk1, C. Cobianu2, J. Holleman1 and J.F. Verweij1
1 MESA Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
2 Institute of Microtechnology, P.O. Box 38-160, 72225 Bucharest, Romania
An experimental study on the deposition kinetics of LPCVD SiO2 films at 450°C in a hot wall system from SiH4 and O2 in the range of very high O2 / SiH4 ratios (100-284) and very low SiH4 partial pressures (3.5-5.2 µbar) is presented. Unexpectedly, a low deposition rate of 1.8 nm/min with a thickness uniformity of less than 6 MAXMIN% on five simultaneously processed wafers is obtained. The results can be explained by a gas phase formation of precursors which dominate the deposition process. This process can be used for different device applications where thin SiO2 films are required, such as Thin Film Transistors and EEPROMs.
© EDP Sciences 1995