J. Phys. IV France 05 (1995) C5-843-C5-859
Optical Properties of CVD-Deposited Dielectric Films for Microelectronic DevicesA. Sassella1, A. Borghesi2, S. Rojas3 and L. Zanotti3
1 Dipartimento di Fisica "A. Volta", Università degli Studi di Pavia, via Bassi 6, 27100 Pavia, Italy
2 Dipartimento di Fisica, Università degli Studi di Modena, via Campi 213a, 41100 Modena, Italy
3 SGS-Thomson Microelectronics, via Olivetti 2, 20041 Agrate B. (MI), Italy
Optical characterization of dielectric films used in integrated circuit device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitrides, and silicon nitrides usually employed for microelectronic applications both in the ultraviolet-visible and infrared spectral ranges are illustrated.
© EDP Sciences 1995