J. Phys. IV France 05 (1995) C5-63-C5-70
Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGexM. Pons1, E. Blanquet2, C. Bernard2, H. Rouch3, J.M. Dedulle3 and R. Madar3
1 S2MC, URA 413/ENSEEG/INPG, BP. 75, Domaine Universitaire, 38402 Saint-Martin d'Hères, France.
2 LTPCM, URA 29/ENSEEG/INPG, BP. 75, Domaine Universitaire, 38402 Saint-Martin d'Hères, France
3 LMGP, URA 1109/ENSEEG/INPG, BP. 46, Domaine Universitaire, 38402 Saint-Martin d'Hères, France
The purpose of this article is to present, for the chemical vapour deposition process, mass transport rnodels with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-xGex solid solution at 1300 K (system Si-Ge-CI-H-Ar), the themodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.
© EDP Sciences 1995