Industrial Applications of Positron Annihilation
J. Phys. IV France 05 (1995) C1-63-C1-72
Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAsM.R. Brozel1 and C. Corbel2
1 Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester, M60 1QD, U.K.
2 INSTN, Gif-sur-Yvette, Saclay, France
Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.
© EDP Sciences 1995