8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-211-C7-214
On mirror temperature of a semiconductor diode laser studied with a photothermal deflection methodM. Bertolotti1, G. Liakhou2, R. Li Voti1, R.P. Wang3, C. Sibilia1, A.V. Syrbu2 and V.P. Yakovlev2
1 Dipartimento di Energetica, Università di Roma "La Sapienza", Via Scarpa 16, 00161 Roma, Italy
2 Technical University of Moldova, Stephan Cel Mare 168, 277012 Kishinev, Moldova
3 Department of Physics, Peking University, Beijing 100871, China
The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements for a AlGaAs quantum well laser diode.
© EDP Sciences 1994