8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-175-C7-178
Investigation of the recrystallization of amorphized InP layers using photoacoustic techniqueH. Yoshinaga1, T. Agui1, T. Matsumori1 and F. Uehara2
1 Dept. of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
2 Dept. of Resource and Environmental Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
The annealing behavior of the amorphous layers produced by heavy Si+ implantation in InP substrates is studied using the piezoelectric PAS with implantation energy as a parameter. The usefulness of PAS is elucidated for investigating depth profile of disorder (defects) in implanted layers and its annealing characteristics.
© EDP Sciences 1994