8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-171-C7-174
A study of a new system for measuring semiconductor using laser stimulated scattering microscopeT. Tanaka, A. Harata and T. Sawada
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).
© EDP Sciences 1994