8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-141-C7-144
Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductorsR.E. Wagner and A. Mandelis
Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 1A4
The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasma- and thermal-wave contributions to the signal throughout the entire frequency range.
© EDP Sciences 1994