8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-125-C7-128
The optical response above the band gap of light emitting porous silicon, as investigated by photoacoustic spectroscopyG. Amato, G. Spagnolo, L. Boarino, R. Gavioso and G. Benedetto
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10124 Turin, Italy
Photoacoustic Spectroscopy (PAS) has been performed on Porous Silicon Layers (PSL) obtained by chemical and electrochemical etching of crystalline Silicon. In the investigated energy range (2.0eV-4.7eV) the samples behave as optically opaque and show strong light scattering properties so to prevent the application of standard reflectivity/trasmission techniques. PAS proves suitable in studying porous media, providing evidence that PSLs retain the original cristallinity. The presence of native oxides on PSLs has been revealed by PAS.
© EDP Sciences 1994