Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-177-C6-182
Recent developments in low temperature infrared detectorsCh. Lucas1, D. Amingual1 and J.P. Chatard2
1 LETI - CEA, Technologies Avancées, CENG - DOPT/SLIR, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
2 SOFRADIR, 43-47 rue Camille Pelletan, 92290 Chatenay-Malabry, France
this paper indicates the state of progress of advanced infrared detection arrays in the world. This presentation is focused on high-performance cooled detectors i.e. CdHgTe photovoltaic arrays (which are more particularly emphasized), InSb detectors, PtSi Schottky barrier diode arrays, extrinsic silicon photoconductors and III-V multi-quantum well detectors. It is shown that interest may be focused on parameters other than the intrinsic detector performance alone. Future trends concerning the technologies are briefly presented. A more detailed description of the CEA-LETI-Laboratoire Infrarouge (LIR) and SOFRADIR technology is given.
© EDP Sciences 1994