Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-165-C6-170
Collapse and large signal modelling of GaAs field effect transistors at 77 KJ. Verdier1, O. Llopis1, J.M. Dienot2, R. Plana2, Ph. Andre1 and J. Graffeuil2
1 LAAS-CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
2 Université Paul Sabatier, 118 rte de Narbonne, 31062 Toulouse, France
A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenon which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is found efficient for the prediction of the large signal power out versus power in characteristic of a cooled HEMT. A further application could be the optimized design of a cooled low phase noise oscillator.
© EDP Sciences 1994