Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-127-C6-132
Numerical simulation of SiGe HBT's at cryogenic temperaturesD.M. Richey, J.D. Cressler and R.C. Jaeger
Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77-400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate model calibration.
© EDP Sciences 1994