Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-87-C6-91
Si vertical JFET at low temperatures ; I-V characteristics and low frequency noiseJ.A. Chroboczek1, A. Granier1, R. Plana2 and J. Graffeuil2
1 France Telecom, Centre National d'Etudes des Télécommunications, BP. 98, 38243 Meyan, France
2 Laboratoire d'Automatique et d'Analyse des Systèmes, CNRS and Université Paul Sabatier, 7 Avenue Colonel Roche, 31077 Toulouse, France
Measurements of the source to drain current/voltage, Id(Vds), characteristics and low frequency (f < 100kHz) noise spectral density function, SV(f), were carried out at 77K < T < 300K on the vertical JFET (BiCMOS-compatible technology). We found that Id(Vds) characteristics do not significantly depend on T, down to 100K, thus low temperature applications of the device are plausible. At f < 10kHz, SV(f) was found to be dominated by the 1/f component. At low T, SV(f) shows features characteristic for the generation-recombination process, which become stronger at large and negative gate bias polarizations. This suggests that the recombination centers are localized at the interface between the channel and the depletion region near the gate.
© EDP Sciences 1994