Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-63-C6-68
Low temperature operation of silicon-on-insulator invertersE. Simoen and C. Claeys
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
This paper describes the cryogenic operation of partially depleted Silicon-On-Insulator inverters. As is shown, the floating operation yields a degradation of the transfer characteristics, which increases upon cooling. Additionally, at cryogenic temperatures, hysteresis effects further deteriorate the performance. These observations will be discussed in view of the cryogenic SOI MOSFET characteristics and anomalies. Finally, the impact of the so-called twingate configuration on the improvement of the inverter characteristics at low temperatures will be demonstrated and discussed.
© EDP Sciences 1994