Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-43-C6-48
Low temperature low frequency noise in oxide and reoxidized-nitrided oxide filmsR. Divakaruni1, R. Peterson2, S. Nystrom2 and C.R. Viswanathan1
1 Electrical Engineering Department, University of California, Los Angeles, California, 90024, U.S.A.
2 Hughes Aircraft Company, El Segundo, California, U.S.A.
The reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by comparing the low frequency noise characteristics at low temperature of p-channel devices before and after positive F-N stress. The RNO devices were found to have a better noise performance after F-N stress and were also found to have less interface state generation due to the warm-up process. However, the creation of negative fixed charge in RNO devices has a severe effect on the threshold voltage.
© EDP Sciences 1994