Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-19-C6-24
Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperatureK. Rais1, G. Ghibaudo1, F. Balestra1 and M. Dutoit2
1 Laboratoire de Physique des Composants à Semiconducteurs, URA du CNRS, ENSERG/ INPG, BP. 257, 38016 Grenoble, France
2 Institute for Micro- and Opto- Electronics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
The electron saturation velocity in Silicon MOS transistors with channel lengths in the range 0.1-0.8 µm is studied for temperatures between 4.2K and 300K. A new method for the evaluation of the saturation velocity in a MOS transistor is presented. This method enables the drift velocity at source end of the device to be determined as a function of the corresponding electric field. The results obtained by this new method are compared to the ones obtained by classically used techniques and to literature data collected on resistive gated MOS devices.
© EDP Sciences 1994