Numéro
J. Phys. IV France
Volume 04, Numéro C4, Avril 1994
3rd International Conference Laser M2P
Page(s) C4-397 - C4-401
DOI http://dx.doi.org/10.1051/jp4:1994495
3rd International Conference Laser M2P

J. Phys. IV France 04 (1994) C4-397-C4-401

DOI: 10.1051/jp4:1994495

0.85 and 1.54 µm emissions of CaF2:Er3+ layers grown by molecular beam epitaxy

E. DARAN1, R. LEGROS1, A. MUÑOS-YAGÜE1, C. FONTAINE1 and L.E. BAUSÁ2

1  Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 Av. Colonel Roche, 31077 Toulouse cedex, France
2  Departamento de Fisica de Materiales C-IV, Universidad Autonoma de Madrid Cantoblanco, 28049 Madrid, Spain


Abstract
Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 50 mol% is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 have been used. The photoluminescence spectra of these thin layers exhibit emissions from centers which were found to correspond to those already reported for CaF2 : Er3+ bulk crystals. The influence of growth temperature and Er concentration on the spectroscopic properties of these layers was investigated. The 1.54 µm emission of interest was shown to behave as aggregate centers, and the integrated luminescence was only quenched for concentrations higher than 35 mol%. The trends observed evidence that molecular beam epitaxy is a powerful technique for growing thin Er-doped fluoride layers.



© EDP Sciences 1994