Numéro
J. Phys. IV France
Volume 04, Numéro C4, Avril 1994
3rd International Conference Laser M2P
Page(s) C4-167 - C4-169
DOI http://dx.doi.org/10.1051/jp4:1994437
3rd International Conference Laser M2P

J. Phys. IV France 04 (1994) C4-167-C4-169

DOI: 10.1051/jp4:1994437

Laser-caused modification of structure and mechanical properties of silicon

V.O. PASETCHNY, V.A. MAKARA, V.M. SIZONTOV, O.V. RUDENKO and G.V. VESNA

Taras Shevchenko University, Department of Physics, Volodimirska st. 64, 252017 Kiev, Ukraine


Abstract
There were investigated laser annealing conditions which cause relaxation of microtensions near in proximity to dislocation sources. It was determined that density and efficiency of such sources may be varied through oxidation of Si crystalles. Utiligation of the found conditions of thermal and laser annealing enabled the autors to set microchardness of porous Si and flexture of Si-SiO2-Si (polycrystallic) structures.



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