Numéro
J. Phys. IV France
Volume 04, Numéro C4, Avril 1994
3rd International Conference Laser M2P
Page(s) C4-671 - C4-676
DOI http://dx.doi.org/10.1051/jp4:19944177
3rd International Conference Laser M2P

J. Phys. IV France 04 (1994) C4-671-C4-676

DOI: 10.1051/jp4:19944177

Tunable diode lasers based on quaternary III-V alloys in the spectral range of 2-4 µm for laser spectroscopy applications

Yu.P. YAKOVLEV, A.N. BARANOV, A.N. IMENDOV, A.A. POPOV and V.V. SHERSTNEV

A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia


Abstract
The structures and electroluminescence characteristics of new two types of single mode A3B5 semiconductor tunable lasers in the 1.8-3.9 µm spectral range have been demonstrated. The first type of tunable diode laser based on quaternary solid solutions GaInAsSb and GaAlAsSb lattice matched to GaSb substrate covers 1.8-2.4 µm spectral range. Such tunable 1.8-2.4 µm lasers have single mode or quasi- single mode operation in the wide temperature range from 1.6 to 300K. The second type of tunable diode laser based on multiple component InPAsSb/InAsSb lattice matched or mismatched to InAs substrate covers 2.8-3.9 µm spectral range, which was not available for diode laser specroscopy until nowadays. Such tunable 2.8-3.9 µm lasers have CW single mode operation up to 100K and pulse operation up to 180K. These lasers can be the key devices for diode laser spectroscopy and sensitive detection of pollutants.



© EDP Sciences 1994