Numéro
J. Phys. IV France
Volume 04, Numéro C4, Avril 1994
3rd International Conference Laser M2P
Page(s) C4-427 - C4-430
DOI http://dx.doi.org/10.1051/jp4:19944102
3rd International Conference Laser M2P

J. Phys. IV France 04 (1994) C4-427-C4-430

DOI: 10.1051/jp4:19944102

Excited state absorption and gain measurements in Cr doped LiNbGeO5 and K3Nb3Si2O13 single crystals

H. MANAA1, F. DEGHOUL1, R. MONCORGE1, A.A. KAMINSKII2, A.V. BUTASHIN2 and B. MILL2

1  LPCML, Université de Lyon I, URA 442 du CNRS, 69622 Villeurbanne, France
2  Subnikov Inst. Cryst., Russian Acad. Sc., Moscow 117333, Russia

Without abstract




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