Numéro
J. Phys. IV France
Volume 04, Numéro C3, Février 1994
36ème Colloque de Métallurgie de l'INSTN
CHANGEMENTS DE PHASES ET MICROSTRUCTURES
Page(s) C3-47 - C3-56
DOI http://dx.doi.org/10.1051/jp4:1994306
36ème Colloque de Métallurgie de l'INSTN
CHANGEMENTS DE PHASES ET MICROSTRUCTURES

J. Phys. IV France 04 (1994) C3-47-C3-56

DOI: 10.1051/jp4:1994306

CdSxSe1-x nanocrystals grown from solid solution in silicate glass. Structural and interfacial aspects. High resolution transmission electron microscopy and optical absorption spectroscopy

M. GANDAIS1, M. ALLAIS1, Y. ZHENG1 and M. CHAMARRO2

1  Laboratoire de Minéralogie-Cristallographie de Paris (LMCP), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France
2  Groupe de Physique des Solides (GPS), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France


Abstract
CdS0.4Se0.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperatures (T = 600, 675 and 700°C) and annealing times (t = 1 hour to 8 days). A regime of nucleation and growth seems to occur at T = 600°C. The growth process is dominant at T = 675 and 700°C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presented here.



© EDP Sciences 1994